منابع مشابه
Extrinsic transient diffusion in silicon
The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the rela...
متن کاملSilicon self-diffusion under extrinsic conditions
Self-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both nand p-type backgrounds. This is direct evidence of the existence of both negatively and positively charged nativ...
متن کاملTransient phosphorus diffusion from silicon and argon implantation damage
We have investigated transient enhanced diffusion of phosphorus in silicon following implantation with silicon or argon ions at low doses. Both conditions show uphill diffusion of phosphorus due to the defect gradients, but the resulting profiles are quite different because of differences in the initial defect distributions. These experiments support an interstitial pair diffusion mechanism for...
متن کاملCorrelation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon
Amorphization of a n-type Czochralski wafer was achieved using a series of Si implants of 30 and 120 keV, each at a dose of 1310 cm. The Si implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV 1310/cm B. Postimplantation anneals were performed in a tube furnace at 750 °C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor th...
متن کاملA Simplified Picture for Transient Enhanced Diffusion of Boron in Silicon
In recent years, transistor junction formation in complementary metal oxide semiconductor devices by ion implantation has encountered serious limitations due to transient enhanced diffusion ~TED! during the annealing step. Current models of TED rely heavily on detailed simulations of the complex diffusion-reaction network that governs TED, and often rely on fitted parameters whose values are un...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1991
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.104883